Infineon CoolMOS™ P6 N-Channel MOSFET Transistor & Diode, 30 A, 650 V, 5-Pin ThinPAK 5 x 6 IPL60R360P6SATMA1
- RS Stock No.:
- 220-7434
- Mfr. Part No.:
- IPL60R360P6SATMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
£2,685.00
(exc. VAT)
£3,220.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 5,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 + | £0.537 | £2,685.00 |
*price indicative
- RS Stock No.:
- 220-7434
- Mfr. Part No.:
- IPL60R360P6SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | CoolMOS™ P6 | |
| Package Type | ThinPAK 5 x 6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 0.36 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolMOS™ P6 | ||
Package Type ThinPAK 5 x 6 | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 0.36 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 1 | ||
The Infineon new Cool MOS Thin PAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. This significantly smaller package size in combination with its benchmark low parasitic inductances can be used as a new and effective way to decrease system solution size in power- density driven designs. The Thin PAK 5x6 package is characterized by a very low source inductance 1.6nH, as well as a similar thermal performance as DPAK. The package hence enables faster and thus more efficient switching of power MOSFETs and is easier to handle in terms of switching behaviour and EMI.
Extremely low losses due to very low FOMRdson*Qg and Eoss
Very high commutation ruggedness
Easy to use/drive
Pb-freeplating, Halogen free mold compound
Qualified for industrial grade applications according to JEDEC
Very high commutation ruggedness
Easy to use/drive
Pb-freeplating, Halogen free mold compound
Qualified for industrial grade applications according to JEDEC
Related links
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