Infineon CoolMOS™ P6 N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 IPW60R190P6FKSA1
- RS Stock No.:
- 145-8600
- Mfr. Part No.:
- IPW60R190P6FKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
£51.60
(exc. VAT)
£61.80
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 60 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | £1.72 | £51.60 |
| 60 - 120 | £1.634 | £49.02 |
| 150 - 270 | £1.565 | £46.95 |
| 300 - 570 | £1.496 | £44.88 |
| 600 + | £1.393 | £41.79 |
*price indicative
- RS Stock No.:
- 145-8600
- Mfr. Part No.:
- IPW60R190P6FKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247 | |
| Series | CoolMOS™ P6 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3.5V | |
| Maximum Power Dissipation | 151 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Length | 16.13mm | |
| Width | 5.21mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 0.9V | |
| Height | 21.1mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Series CoolMOS™ P6 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3.5V | ||
Maximum Power Dissipation 151 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 16.13mm | ||
Width 5.21mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 37 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 0.9V | ||
Height 21.1mm | ||
- COO (Country of Origin):
- MY
Infineon CoolMOS™E6/P6 series Power MOSFET
The Infineon range of CoolMOS™E6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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