Infineon CoolMOS P6 Type N-Channel MOSFET & Diode, 109 A, 650 V Enhancement, 3-Pin TO-247

RS Stock No.:: 220-7456
Mfr. Part No.:: IPW60R099P6XKSA1
Brand:: Infineon

Infineon CoolMOS P6 Type N-Channel MOSFET & Diode, 109 A, 650 V Enhancement, 3-Pin TO-247

Bulk discount available

Subtotal (1 tube of 30 units)*

£126.30

(exc. VAT)

£151.50

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 240 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Tube*
30 - 30	£4.21	£126.30
60 - 120	£4.00	£120.00
150 +	£3.831	£114.93

*price indicative

RS Stock No.:: 220-7456
Mfr. Part No.:: IPW60R099P6XKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	109A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	CoolMOS P6
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	99mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	70nC
	Forward Voltage Vf	0.9V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	278W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	5.21 mm
	Length	16.13mm
	Height	21.1mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 109A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series CoolMOS P6
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 99mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 70nC
	Forward Voltage Vf 0.9V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 278W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 5.21 mm
	Length 16.13mm
	Height 21.1mm
	Automotive Standard No

Datasheet - IPW60R099P6XKSA1

The Infineon's Cool MOS P6 super junction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. Cool MOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Reduced gate charge (Q g)

Higher V the

Good body diode ruggedness

Optimized integrated R g

Improved dv/dt from 50V/ns

Cool MOS™ quality with over 12 years manufacturing experience in super junction technology

Improved efficiency especially in light load condition

Better efficiency in soft switching applications due to earlier turn-off

Suitable for hard- & soft-switching topologies

Optimized balance of efficiency and ease of use and good controllability of switching behaviour

High robustness and better efficiency

Outstanding quality & reliability