Infineon CoolMOS™ P6 Dual N-Channel MOSFET Transistor & Diode, 109 A, 650 V, 3-Pin TO-247 IPW60R099P6XKSA1
- RS Stock No.:
- 220-7456
- Mfr. Part No.:
- IPW60R099P6XKSA1
- Brand:
- Infineon
Save 9% when you buy 150 units
Subtotal (1 tube of 30 units)*
£126.30
(exc. VAT)
£151.50
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 240 unit(s) shipping from 01 December 2025
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | £4.21 | £126.30 |
| 60 - 120 | £4.00 | £120.00 |
| 150 + | £3.831 | £114.93 |
*price indicative
- RS Stock No.:
- 220-7456
- Mfr. Part No.:
- IPW60R099P6XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 109 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247 | |
| Series | CoolMOS™ P6 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.099 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4..5V | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 109 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Series CoolMOS™ P6 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.099 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4..5V | ||
Number of Elements per Chip 2 | ||
The Infineon's Cool MOS P6 super junction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. Cool MOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.
Reduced gate charge (Q g)
Higher V the
Good body diode ruggedness
Optimized integrated R g
Improved dv/dt from 50V/ns
Cool MOS™ quality with over 12 years manufacturing experience in super junction technology
Improved efficiency especially in light load condition
Better efficiency in soft switching applications due to earlier turn-off
Suitable for hard- & soft-switching topologies
Optimized balance of efficiency and ease of use and good controllability of switching behaviour
High robustness and better efficiency
Outstanding quality & reliability
Higher V the
Good body diode ruggedness
Optimized integrated R g
Improved dv/dt from 50V/ns
Cool MOS™ quality with over 12 years manufacturing experience in super junction technology
Improved efficiency especially in light load condition
Better efficiency in soft switching applications due to earlier turn-off
Suitable for hard- & soft-switching topologies
Optimized balance of efficiency and ease of use and good controllability of switching behaviour
High robustness and better efficiency
Outstanding quality & reliability
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