Infineon CoolMOS™ P6 N-Channel MOSFET, 22.4 A, 600 V, 5-Pin ThinkPAK 8 x 8 IPL60R180P6AUMA1
- RS Stock No.:
- 214-9073
- Mfr. Part No.:
- IPL60R180P6AUMA1
- Brand:
- Infineon
Subtotal (1 reel of 3000 units)*
£2,688.00
(exc. VAT)
£3,225.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 09 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.896 | £2,688.00 |
*price indicative
- RS Stock No.:
- 214-9073
- Mfr. Part No.:
- IPL60R180P6AUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 22.4 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | ThinkPAK 8 x 8 | |
| Series | CoolMOS™ P6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 0.18 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 22.4 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type ThinkPAK 8 x 8 | ||
Series CoolMOS™ P6 | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 0.18 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Increased MOSFET dv/dt ruggedness
Easy to use/drive
Easy to use/drive
Related links
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