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Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET, 14 A, 650 V Enhancement, 5-Pin ThinPAK IPL60R185CFD7AUMA1

RS Stock No.:: 215-2522
Mfr. Part No.:: IPL60R185CFD7AUMA1
Brand:: Infineon

Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET, 14 A, 650 V Enhancement, 5-Pin ThinPAK IPL60R185CFD7AUMA1

Subtotal (1 pack of 5 units)*

£10.20

(exc. VAT)

£12.25

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

3,000 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 +	£2.04	£10.20

*price indicative

RS Stock No.:: 215-2522
Mfr. Part No.:: IPL60R185CFD7AUMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	14A
	Maximum Drain Source Voltage Vds	650V
	Package Type	ThinPAK
	Series	600V CoolMOS CFD7
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	185mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	85W
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	28nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	8.1mm
	Standards/Approvals	No
	Width	1.1 mm
	Length	8.1mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 14A
	Maximum Drain Source Voltage Vds 650V
	Package Type ThinPAK
	Series 600V CoolMOS CFD7
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 185mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 85W
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 28nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 8.1mm
	Standards/Approvals No
	Width 1.1 mm
	Length 8.1mm
	Automotive Standard No

Datasheet - IPL60R185CFD7AUMA1

The Infineon 600V Cool MOS™ CFD7 is latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS™ 7 series. Cool MOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

Lowest FOM RDS(on) x Qg and Eoss

Best-in-class RDS(on)/package combinations