Infineon HEXFET Type N-Channel MOSFET & Diode, 8.8 A, 30 V Enhancement, 8-Pin PQFN
- RS Stock No.:
- 220-7487
- Mfr. Part No.:
- IRFHS8342TRPBF
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 220-7487
- Mfr. Part No.:
- IRFHS8342TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 8.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.7nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Industrial Qualification, MSL1, RoHS | |
| Width | 1 mm | |
| Height | 2.1mm | |
| Length | 2.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 8.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.7nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 2.1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Industrial Qualification, MSL1, RoHS | ||
Width 1 mm | ||
Height 2.1mm | ||
Length 2.1mm | ||
Automotive Standard No | ||
The Infineon IRFHS8342 is strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface-mount power package
Low RDS(on) in a small package
Small outline
Wide availability from distribution partners
Industry standard qualification level
Standard pinout allows for drop in replacement
High power density
Compact form factor for space critical applications
Related links
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 30 V, 8-Pin DFN2020 IRFHS8342TRPBF
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 100 V, 3-Pin TO-247AC AUIRFP4110
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 100 V, 8-Pin SO-8 IRF7490TRPBF
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 75 V, 3-Pin D2PAK IRF3007STRLPBF
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 150 V, 3-Pin DPAK IRFR24N15DTRPBF
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 55 V, 3-Pin DPAK IRFR1010ZTRPBF
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 30 V, 3-Pin DPAK IRFR3709ZTRLPBF
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 40 V, 3-Pin D2PAK AUIRF1404STRL


