Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 100 A, 30 V, 8-Pin PQFN 5 x 6 IRFH5300TRPBF

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Subtotal (1 reel of 4000 units)*

£1,736.00

(exc. VAT)

£2,084.00

(inc. VAT)

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  • 999,996,000 unit(s) shipping from 01 January 2026
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Units
Per unit
Per Reel*
4000 +£0.434£1,736.00

*price indicative

RS Stock No.:
220-7482
Mfr. Part No.:
IRFH5300TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

PQFN 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0014 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Number of Elements per Chip

2

The Infineon IRFH5300 is strong power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Logic level : Optimized for 5 V gate drive voltage

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