Infineon HEXFET N-Channel MOSFET & Diode, 100 A, 30 V Enhancement, 8-Pin PQFN IRFH5300TRPBF
- RS Stock No.:
- 220-7484
- Mfr. Part No.:
- IRFH5300TRPBF
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (10 units, in packs of 10)*
£11.80
(exc. VAT)
£14.20
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 3,840 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £1.18 | £11.80 |
| 100 - 240 | £1.122 | £11.22 |
| 250 - 490 | £1.073 | £10.73 |
| 500 - 990 | £1.026 | £10.26 |
| 1000 + | £0.956 | £9.56 |
*price indicative
- RS Stock No.:
- 220-7484
- Mfr. Part No.:
- IRFH5300TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.6W | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.75mm | |
| Standards/Approvals | RoHS | |
| Length | 6mm | |
| Height | 900μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.6W | ||
Maximum Operating Temperature 150°C | ||
Width 4.75mm | ||
Standards/Approvals RoHS | ||
Length 6mm | ||
Height 900μm | ||
Automotive Standard No | ||
The Infineon IRFH5300 is strong power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Logic level : Optimized for 5 V gate drive voltage
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