Infineon HEXFET N-Channel MOSFET, 10 A, 100 V, 8-Pin PQFN 5 x 6 IRFH5210TRPBF

Subtotal (1 reel of 4000 units)*

£2,176.00

(exc. VAT)

£2,612.00

(inc. VAT)

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4000 +£0.544£2,176.00

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RS Stock No.:
168-5989
Mfr. Part No.:
IRFH5210TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

100 V

Package Type

PQFN 5 x 6

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

104 W

Maximum Gate Source Voltage

-20 V, +20 V

Length

5mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Width

6mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

0.9mm

COO (Country of Origin):
CN

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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