Infineon HEXFET N-Channel MOSFET, 10 A, 100 V, 8-Pin PQFN 5 x 6 IRFH5210TRPBF
- RS Stock No.:
- 168-5989
- Mfr. Part No.:
- IRFH5210TRPBF
- Brand:
- Infineon
Subtotal (1 reel of 4000 units)*
£2,176.00
(exc. VAT)
£2,612.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 4,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 4000 + | £0.544 | £2,176.00 |
*price indicative
- RS Stock No.:
- 168-5989
- Mfr. Part No.:
- IRFH5210TRPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | PQFN 5 x 6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 14.9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 104 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 6mm | |
| Length | 5mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
| Height | 0.9mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type PQFN 5 x 6 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 14.9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 104 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 6mm | ||
Length 5mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 40 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
Height 0.9mm | ||
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