Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 12 A, 30 V, 8-Pin PQFN 3 x 3 IRFH3707TRPBF

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Subtotal (1 pack of 50 units)*

£17.15

(exc. VAT)

£20.60

(inc. VAT)

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  • 4,000 unit(s) ready to ship
  • Plus 999,995,950 unit(s) shipping from 01 January 2026
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Units
Per unit
Per Pack*
50 - 200£0.343£17.15
250 - 450£0.257£12.85
500 - 1200£0.24£12.00
1250 - 2450£0.223£11.15
2500 +£0.206£10.30

*price indicative

Packaging Options:
RS Stock No.:
220-7481
Mfr. Part No.:
IRFH3707TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

30 V

Package Type

PQFN 3 x 3

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0124 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Number of Elements per Chip

2

The Infineon Strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface-mount package
Potential alternative to high-RDS(on) SuperSO8 package
Wide availability from distribution partners
Industry standard qualification level
Standard pinout allows for drop in replacement
Small form factor

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