Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 8.8 A, 30 V, 8-Pin DFN2020 IRFHS8342TRPBF

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Packaging Options:
RS Stock No.:
220-7488
Mfr. Part No.:
IRFHS8342TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

8.8 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

DFN2020

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.016 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Number of Elements per Chip

2

The Infineon IRFHS8342 is strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface-mount power package
Low RDS(on) in a small package
Small outline
Wide availability from distribution partners
Industry standard qualification level
Standard pinout allows for drop in replacement
High power density
Compact form factor for space critical applications

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