Name: Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 8.8 A, 30 V, 8-Pin DFN2020 IRFHS8342TRPBF
Brand: Infineon
SKU: 220-7488
Price: 0.12 GBP
Availability: OutOfStock

The Infineon IRFHS8342 is strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface-mount power package
Low RDS(on) in a small package
Small outline
Wide availability from distribution partners
Industry standard qualification level
Standard pinout allows for drop in replacement
High power density
Compact form factor for space critical applications

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	8.8 A
	Maximum Drain Source Voltage	30 V
	Series	HEXFET
	Package Type	DFN2020
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	0.016 O
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	20V
	Number of Elements per Chip	2

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 8.8 A
	Maximum Drain Source Voltage 30 V
	Series HEXFET
	Package Type DFN2020
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 0.016 O
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 20V
	Number of Elements per Chip 2

Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 8.8 A, 30 V, 8-Pin DFN2020 IRFHS8342TRPBF

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