Infineon HEXFET N-Channel MOSFET, 44 A, 150 V, 8-Pin PQFN 5 x 6 IRFH5015TRPBF

Subtotal (1 reel of 4000 units)*

£2,120.00

(exc. VAT)

£2,560.00

(inc. VAT)

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Units
Per unit
Per Reel*
4000 +£0.53£2,120.00

*price indicative

RS Stock No.:
168-5987
Mfr. Part No.:
IRFH5015TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

150 V

Package Type

PQFN 5 x 6

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

31 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

156 W

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

36 nC @ 10 V

Length

6mm

Number of Elements per Chip

1

Width

5mm

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

Height

0.85mm

COO (Country of Origin):
CN

N-Channel Power MOSFET 150V to 600V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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