Infineon HEXFET N-Channel MOSFET, 100 A, 60 V, 8-Pin PQFN 5 x 6 IRFH5006TRPBF

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
168-5985
Mfr. Part No.:
IRFH5006TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Series

HEXFET

Package Type

PQFN 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

156 W

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

69 nC @ 20 V

Number of Elements per Chip

1

Width

5mm

Length

6mm

Maximum Operating Temperature

+150 °C

Height

0.85mm

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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