Infineon CoolMOS™ N-Channel MOSFET, 37 A, 600 V, 3-Pin D2PAK IPB60R080P7ATMA1

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Subtotal (1 reel of 1000 units)*

£1,458.00

(exc. VAT)

£1,750.00

(inc. VAT)

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Per unit
Per Reel*
1000 +£1.458£1,458.00

*price indicative

RS Stock No.:
217-2503
Mfr. Part No.:
IPB60R080P7ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

37 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Series

CoolMOS™

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

80 mO

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM R DS(on)xE oss DS(on)xQ G
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available

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