MPN

Infineon CoolMOS Type N-Channel MOSFET, 37 A, 600 V Enhancement, 3-Pin TO-263

RS Stock No.:: 217-2503
Mfr. Part No.:: IPB60R080P7ATMA1
Brand:: Infineon

Infineon CoolMOS Type N-Channel MOSFET, 37 A, 600 V Enhancement, 3-Pin TO-263

Subtotal (1 reel of 1000 units)*

£1,458.00

(exc. VAT)

£1,750.00

(inc. VAT)

FREE delivery for orders over £50.00

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Shipping from 04 May 2026

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Units	Per unit	Per Reel*
1000 +	£1.458	£1,458.00

*price indicative

RS Stock No.:: 217-2503
Mfr. Part No.:: IPB60R080P7ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	37A
	Maximum Drain Source Voltage Vds	600V
	Series	CoolMOS
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	51nC
	Maximum Power Dissipation Pd	129W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	10.31mm
	Height	4.57mm
	Width	9.45 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 37A
	Maximum Drain Source Voltage Vds 600V
	Series CoolMOS
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 51nC
	Maximum Power Dissipation Pd 129W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 10.31mm
	Height 4.57mm
	Width 9.45 mm
	Automotive Standard No

Datasheet - IPB60R080P7ATMA1

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM R DS(on)xE oss DS(on)xQ G

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available