Infineon CoolMOS™ N-Channel MOSFET Transistor & Diode, 145 A, 700 V, 3-Pin D2PAK IPB65R065C7ATMA2
- RS Stock No.:
- 220-7390
- Mfr. Part No.:
- IPB65R065C7ATMA2
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£2,192.00
(exc. VAT)
£2,630.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 06 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
1000 + | £2.192 | £2,192.00 |
*price indicative
- RS Stock No.:
- 220-7390
- Mfr. Part No.:
- IPB65R065C7ATMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 145 A | |
Maximum Drain Source Voltage | 700 V | |
Series | CoolMOS™ | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.065 O | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 145 A | ||
Maximum Drain Source Voltage 700 V | ||
Series CoolMOS™ | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.065 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
The Infineon Cool MOS C7 super junction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
650V voltage
Revolutionary best-in-class R DS(on)/package
Reduced energy stored in output capacitance (Eoss)
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
Revolutionary best-in-class R DS(on)/package
Reduced energy stored in output capacitance (Eoss)
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
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