Infineon CoolMOS™ Silicon N-Channel MOSFET, 11.4 A, 600 V, 3-Pin TO 263 IPB65R310CFDAATMA1

Subtotal (1 reel of 1000 units)*

£912.00

(exc. VAT)

£1,094.00

(inc. VAT)

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Units
Per unit
Per Reel*
1000 +£0.912£912.00

*price indicative

RS Stock No.:
222-4659
Mfr. Part No.:
IPB65R310CFDAATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

11.4 A

Maximum Drain Source Voltage

600 V

Package Type

TO 263

Series

CoolMOS™

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.31 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

AEC Q101 qualified

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