Infineon CoolMOS™ N-Channel MOSFET, 37 A, 600 V, 3-Pin D2PAK IPB60R080P7ATMA1
- RS Stock No.:
- 217-2504
- Mfr. Part No.:
- IPB60R080P7ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£15.45
(exc. VAT)
£18.55
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 510 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | £3.09 | £15.45 |
| 10 - 20 | £2.72 | £13.60 |
| 25 - 45 | £2.564 | £12.82 |
| 50 - 120 | £2.38 | £11.90 |
| 125 + | £2.194 | £10.97 |
*price indicative
- RS Stock No.:
- 217-2504
- Mfr. Part No.:
- IPB60R080P7ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 37 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | D2PAK (TO-263) | |
| Series | CoolMOS™ | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 80 mO | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 37 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type D2PAK (TO-263) | ||
Series CoolMOS™ | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 80 mO | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
600V P7 enables excellent FOM R DS(on)xE oss DS(on)xQ G
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Related links
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