Infineon CoolMOS™ CE N-Channel MOSFET, 37 A, 500 V, 3-Pin TO-220 FP IPA60R080P7XKSA1
- RS Stock No.:
- 215-2476
- Mfr. Part No.:
- IPA60R080P7XKSA1
- Brand:
- Infineon
Subtotal (1 tube of 50 units)*
£102.10
(exc. VAT)
£122.50
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,950 unit(s) shipping from 09 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | £2.042 | £102.10 |
*price indicative
- RS Stock No.:
- 215-2476
- Mfr. Part No.:
- IPA60R080P7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 37 A | |
| Maximum Drain Source Voltage | 500 V | |
| Series | CoolMOS™ CE | |
| Package Type | TO-220 FP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.08 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 37 A | ||
Maximum Drain Source Voltage 500 V | ||
Series CoolMOS™ CE | ||
Package Type TO-220 FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.08 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon 600V Cool MOS™ P7 is the successor to the 600V Cool MOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the Cool MOS™ 7th generation platform ensure its high efficiency. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching application seven more efficient, more compact and much cooler.
Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
Excellent ESD robustness >2kV(HBM) for all products
Significant reduction of switching and conduction losses
Wide portfolio in through hole and surface mount packages
Excellent ESD robustness >2kV(HBM) for all products
Significant reduction of switching and conduction losses
Wide portfolio in through hole and surface mount packages
Related links
- Infineon CoolMOS™ CE N-Channel MOSFET 500 V, 3-Pin TO-220 FP IPA60R080P7XKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 150 V, 3-Pin TO-220 FP IPA105N15N3GXKSA1
- Infineon CoolMOS™ CE N-Channel MOSFET 500 V, 3-Pin TO-220 FP IPA50R950CEXKSA2
- Infineon CoolMOS™ CE N-Channel MOSFET 500 V, 3-Pin TO-220 FP IPA50R500CEXKSA2
- Infineon CoolMOS™ N-Channel MOSFET 500 V, 3-Pin TO-220 FP IPAN50R500CEXKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 600 V, 3-Pin TO-220 IPP60R080P7XKSA1
- onsemi SuperFET II N-Channel MOSFET 600 V, 3-Pin TO-220 FCP104N60F
- Infineon CoolMOS™ CE N-Channel MOSFET 600 V, 3-Pin TO-220 FP IPAW60R600CEXKSA1