Infineon CoolMOS™ CE N-Channel MOSFET, 14.1 A, 550 V, 3-Pin DPAK IPD50R380CEAUMA1

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Subtotal (1 reel of 2500 units)*

£897.50

(exc. VAT)

£1,077.50

(inc. VAT)

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Units
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Per Reel*
2500 - 2500£0.359£897.50
5000 +£0.341£852.50

*price indicative

RS Stock No.:
168-5909
Mfr. Part No.:
IPD50R380CEAUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

14.1 A

Maximum Drain Source Voltage

550 V

Package Type

DPAK (TO-252)

Series

CoolMOS™ CE

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

98 W

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

24.8 nC @ 10 V

Length

6.73mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

6.22mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.85V

Height

2.41mm

COO (Country of Origin):
CN

Infineon CoolMOS™ CE Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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