Infineon CoolMOS™ CE N-Channel MOSFET, 4.8 A, 550 V, 3-Pin SOT-223 IPN50R1K4CEATMA1
- RS Stock No.:
- 168-5922
- Mfr. Part No.:
- IPN50R1K4CEATMA1
- Brand:
- Infineon
Subtotal (1 reel of 3000 units)*
£363.00
(exc. VAT)
£435.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 15 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.121 | £363.00 |
*price indicative
- RS Stock No.:
- 168-5922
- Mfr. Part No.:
- IPN50R1K4CEATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4.8 A | |
| Maximum Drain Source Voltage | 550 V | |
| Series | CoolMOS™ CE | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.4 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 5 W | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 8.2 nC @ 10 V | |
| Length | 6.7mm | |
| Width | 3.7mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -40 °C | |
| Forward Diode Voltage | 0.83V | |
| Height | 1.7mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.8 A | ||
Maximum Drain Source Voltage 550 V | ||
Series CoolMOS™ CE | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.4 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 5 W | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 8.2 nC @ 10 V | ||
Length 6.7mm | ||
Width 3.7mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -40 °C | ||
Forward Diode Voltage 0.83V | ||
Height 1.7mm | ||
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