Infineon CoolMOS™ CE N-Channel MOSFET, 14.1 A, 550 V, 3-Pin DPAK IPD50R380CEAUMA1
- RS Stock No.:
- 130-0897
- Mfr. Part No.:
- IPD50R380CEAUMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£7.08
(exc. VAT)
£8.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 70 unit(s) ready to ship
- Plus 10 unit(s) ready to ship from another location
- Plus 190 unit(s) shipping from 11 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £0.708 | £7.08 |
| 50 - 490 | £0.674 | £6.74 |
| 500 - 990 | £0.486 | £4.86 |
| 1000 - 2490 | £0.403 | £4.03 |
| 2500 + | £0.393 | £3.93 |
*price indicative
- RS Stock No.:
- 130-0897
- Mfr. Part No.:
- IPD50R380CEAUMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 14.1 A | |
| Maximum Drain Source Voltage | 550 V | |
| Series | CoolMOS™ CE | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 380 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 98 W | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 24.8 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Forward Diode Voltage | 0.85V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.41mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 14.1 A | ||
Maximum Drain Source Voltage 550 V | ||
Series CoolMOS™ CE | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 380 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 98 W | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 24.8 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Width 6.22mm | ||
Length 6.73mm | ||
Forward Diode Voltage 0.85V | ||
Minimum Operating Temperature -55 °C | ||
Height 2.41mm | ||
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