Infineon CoolMOS™ CE N-Channel MOSFET, 18.5 A, 550 V, 3-Pin TO-220 IPP50R190CEXKSA1

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£13.60

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£16.30

(inc. VAT)

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10 - 40£1.36£13.60
50 - 90£1.292£12.92
100 - 240£1.238£12.38
250 - 490£1.183£11.83
500 +£1.102£11.02

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Packaging Options:
RS Stock No.:
914-0227
Mfr. Part No.:
IPP50R190CEXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

18.5 A

Maximum Drain Source Voltage

550 V

Package Type

TO-220

Series

CoolMOS™ CE

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

127 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

10.36mm

Typical Gate Charge @ Vgs

47.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

4.57mm

Forward Diode Voltage

0.85V

Minimum Operating Temperature

-55 °C

Height

15.95mm

Infineon CoolMOS™ CE Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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