Infineon CoolMOS™ CE N-Channel MOSFET, 6.6 A, 550 V, 3-Pin SOT-223 IPN50R950CEATMA1

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RS Stock No.:
168-5927
Mfr. Part No.:
IPN50R950CEATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

6.6 A

Maximum Drain Source Voltage

550 V

Series

CoolMOS™ CE

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

950 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

5 W

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Width

3.7mm

Length

6.7mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

10.5 nC @ 10 V

Height

1.7mm

Forward Diode Voltage

0.83V

Minimum Operating Temperature

-40 °C

COO (Country of Origin):
CN

Infineon CoolMOS™ CE Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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