Infineon CoolMOS™ CE N-Channel MOSFET, 18.5 A, 550 V, 3-Pin TO-220 IPP50R190CEXKSA1
- RS Stock No.:
- 165-8158
- Mfr. Part No.:
- IPP50R190CEXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£64.00
(exc. VAT)
£77.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 450 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £1.28 | £64.00 |
| 100 - 200 | £1.114 | £55.70 |
| 250 - 450 | £1.05 | £52.50 |
| 500 - 950 | £0.973 | £48.65 |
| 1000 + | £0.909 | £45.45 |
*price indicative
- RS Stock No.:
- 165-8158
- Mfr. Part No.:
- IPP50R190CEXKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18.5 A | |
| Maximum Drain Source Voltage | 550 V | |
| Package Type | TO-220 | |
| Series | CoolMOS™ CE | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 127 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 4.57mm | |
| Number of Elements per Chip | 1 | |
| Length | 10.36mm | |
| Typical Gate Charge @ Vgs | 47.2 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 0.85V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.95mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 18.5 A | ||
Maximum Drain Source Voltage 550 V | ||
Package Type TO-220 | ||
Series CoolMOS™ CE | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 127 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 4.57mm | ||
Number of Elements per Chip 1 | ||
Length 10.36mm | ||
Typical Gate Charge @ Vgs 47.2 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 0.85V | ||
Minimum Operating Temperature -55 °C | ||
Height 15.95mm | ||
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