Infineon SIPMOS® P-Channel MOSFET, 620 mA, 60 V, 3-Pin SC-59 BSR315PH6327XTSA1
- RS Stock No.:
- 215-2468
- Mfr. Part No.:
- BSR315PH6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 3000 units)*
£423.00
(exc. VAT)
£507.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 23 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | £0.141 | £423.00 |
| 6000 - 6000 | £0.134 | £402.00 |
| 9000 + | £0.125 | £375.00 |
*price indicative
- RS Stock No.:
- 215-2468
- Mfr. Part No.:
- BSR315PH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 620 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SC-59 | |
| Series | SIPMOS® | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.8 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 620 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SC-59 | ||
Series SIPMOS® | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.8 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon SIPMOS® Small-Signal-Transistor P-channel enhancement mode Field-Effect Transistor (FET), -20V maximum drain source voltage with SOT-23 package type. The Infineons highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. The BSS84P is a p-channel enhancement mode MOSFET in a small surface mount package with superior switching performance. This product is particularly suited for low-voltage, low-current applications.
Enhancement mode
Logic level
Avalanche rated
Fast switching
Dv/dt rated
Pb-free lead-plating
Logic level
Avalanche rated
Fast switching
Dv/dt rated
Pb-free lead-plating
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