Infineon SIPMOS® P-Channel MOSFET, 150 mA, 60 V, 3-Pin SOT-323 BSS84PWH6327XTSA1
- RS Stock No.:
- 826-9945
- Mfr. Part No.:
- BSS84PWH6327XTSA1
- Brand:
- Infineon
Subtotal (1 reel of 500 units)*
£31.00
(exc. VAT)
£37.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 17,000 unit(s) shipping from 08 September 2025
- Plus 999,982,500 unit(s) shipping from 02 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 500 + | £0.062 | £31.00 |
*price indicative
- RS Stock No.:
- 826-9945
- Mfr. Part No.:
- BSS84PWH6327XTSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 150 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-323 | |
| Series | SIPMOS® | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 25 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 300 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 1 nC @ 10 V | |
| Length | 2mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.25mm | |
| Transistor Material | Si | |
| Height | 0.8mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 150 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-323 | ||
Series SIPMOS® | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 25 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 300 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 1 nC @ 10 V | ||
Length 2mm | ||
Maximum Operating Temperature +150 °C | ||
Width 1.25mm | ||
Transistor Material Si | ||
Height 0.8mm | ||
Minimum Operating Temperature -55 °C | ||
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