Infineon SIPMOS® P-Channel MOSFET, 330 mA, 60 V, 3-Pin SOT-23 BSS83PH6327XTSA1
- RS Stock No.:
- 753-2857
- Mfr. Part No.:
- BSS83PH6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 50 units)*
£9.00
(exc. VAT)
£11.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 50 unit(s) ready to ship
- Plus 36,950 unit(s) shipping from 12 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | £0.18 | £9.00 |
| 250 - 450 | £0.122 | £6.10 |
| 500 - 1200 | £0.115 | £5.75 |
| 1250 - 2450 | £0.106 | £5.30 |
| 2500 + | £0.081 | £4.05 |
*price indicative
- RS Stock No.:
- 753-2857
- Mfr. Part No.:
- BSS83PH6327XTSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 330 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-23 | |
| Series | SIPMOS® | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 360 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 2.38 nC @ 10 V | |
| Width | 1.3mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 2.9mm | |
| Number of Elements per Chip | 1 | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 330 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-23 | ||
Series SIPMOS® | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 360 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 2.38 nC @ 10 V | ||
Width 1.3mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 2.9mm | ||
Number of Elements per Chip 1 | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
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