Infineon SIPMOS® P-Channel MOSFET, 330 mA, 60 V, 3-Pin SOT-23 BSS83PH6327XTSA1

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Subtotal (1 reel of 3000 units)*

£219.00

(exc. VAT)

£264.00

(inc. VAT)

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3000 - 3000£0.073£219.00
6000 - 12000£0.069£207.00
15000 +£0.065£195.00

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RS Stock No.:
145-8801
Mfr. Part No.:
BSS83PH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

330 mA

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

2.38 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

1.3mm

Number of Elements per Chip

1

Transistor Material

Si

Length

2.9mm

Minimum Operating Temperature

-55 °C

Height

1mm

Infineon SIPMOS® P-Channel MOSFETs


The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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