Infineon SIPMOS® P-Channel MOSFET, 150 mA, 60 V, 3-Pin SOT-323 BSS84PWH6327XTSA1

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Subtotal (1 reel of 3000 units)*

£120.00

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£150.00

(inc. VAT)

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3000 - 3000£0.04£120.00
6000 - 12000£0.038£114.00
15000 +£0.036£108.00

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RS Stock No.:
145-8835
Mfr. Part No.:
BSS84PWH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

150 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-323

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

25 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.25mm

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

1 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

2mm

Height

0.8mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

Infineon SIPMOS® P-Channel MOSFETs


The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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