Infineon SIPMOS® N-Channel MOSFET, 280 mA, 60 V, 3-Pin SOT-323 BSS138WH6433XTMA1

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Subtotal (1 reel of 10000 units)*

£400.00

(exc. VAT)

£500.00

(inc. VAT)

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Units
Per unit
Per Reel*
10000 - 10000£0.04£400.00
20000 - 20000£0.038£380.00
30000 +£0.036£360.00

*price indicative

RS Stock No.:
165-5731
Mfr. Part No.:
BSS138WH6433XTMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

280 mA

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

2mm

Width

1.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

1 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

0.8mm

COO (Country of Origin):
CN

Infineon SIPMOS® N-Channel MOSFETs



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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