Infineon SIPMOS® N-Channel MOSFET, 280 mA, 60 V, 3-Pin SOT-323 BSS138WH6433XTMA1
- RS Stock No.:
- 165-5731
- Mfr. Part No.:
- BSS138WH6433XTMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 10000 units)*
£400.00
(exc. VAT)
£500.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 26 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 10000 - 10000 | £0.04 | £400.00 |
| 20000 - 20000 | £0.038 | £380.00 |
| 30000 + | £0.036 | £360.00 |
*price indicative
- RS Stock No.:
- 165-5731
- Mfr. Part No.:
- BSS138WH6433XTMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 280 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-323 | |
| Series | SIPMOS® | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.4V | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.25mm | |
| Typical Gate Charge @ Vgs | 1 nC @ 10 V | |
| Length | 2mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.8mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 280 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-323 | ||
Series SIPMOS® | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.4V | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 1.25mm | ||
Typical Gate Charge @ Vgs 1 nC @ 10 V | ||
Length 2mm | ||
Minimum Operating Temperature -55 °C | ||
Height 0.8mm | ||
Related links
- Infineon SIPMOS® N-Channel MOSFET 60 V, 3-Pin SOT-323 BSS138WH6433XTMA1
- Infineon N-Channel MOSFET 60 V, 3-Pin SOT-323 BSS138WH6327XTSA1
- onsemi N-Channel MOSFET 60 V, 3-Pin SOT-23 NDS7002A
- Microchip TN2106 N-Channel MOSFET 60 V, 3-Pin SOT-23 TN2106K1-G
- onsemi Dual N-Channel MOSFET 60 V, 6-Pin SOT-563 2N7002V
- Diodes Inc Dual N-Channel MOSFET 60 V, 6-Pin SOT-563 2N7002VC-7
- Diodes Inc P-Channel MOSFET 60 V, 3-Pin TO-92 ZVP2106ASTZ
- Diodes Inc P-Channel MOSFET 60 V, 3-Pin E-Line ZVP2106A