Infineon SIPMOS® P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK SPB80P06PGATMA1

Subtotal (1 reel of 1000 units)*

£1,370.00

(exc. VAT)

£1,640.00

(inc. VAT)

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Per Reel*
1000 +£1.37£1,370.00

*price indicative


RS Stock No.:
911-0711
Mfr. Part No.:
SPB80P06PGATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

340 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.31mm

Typical Gate Charge @ Vgs

115 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

9.45mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

4.57mm

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