Infineon SIPMOS® P-Channel MOSFET, 11.3 A, 100 V, 3-Pin TO-220 SPP15P10PLHXKSA1
- RS Stock No.:
- 823-5560
- Mfr. Part No.:
- SPP15P10PLHXKSA1
- Brand:
- Infineon
Save 26% when you buy 500 units
Subtotal (1 pack of 5 units)*
£8.50
(exc. VAT)
£10.20
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 40 unit(s) ready to ship
- Plus 65 unit(s) shipping from 08 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.70 | £8.50 |
| 50 - 120 | £1.53 | £7.65 |
| 125 - 245 | £1.428 | £7.14 |
| 250 - 495 | £1.326 | £6.63 |
| 500 + | £1.242 | £6.21 |
*price indicative
- RS Stock No.:
- 823-5560
- Mfr. Part No.:
- SPP15P10PLHXKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 11.3 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220 | |
| Series | SIPMOS® | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 270 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 128 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.57mm | |
| Number of Elements per Chip | 1 | |
| Length | 10.36mm | |
| Typical Gate Charge @ Vgs | 47 nC @ 10 V | |
| Height | 15.95mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 11.3 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220 | ||
Series SIPMOS® | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 270 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 128 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Width 4.57mm | ||
Number of Elements per Chip 1 | ||
Length 10.36mm | ||
Typical Gate Charge @ Vgs 47 nC @ 10 V | ||
Height 15.95mm | ||
Minimum Operating Temperature -55 °C | ||
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