Infineon SIPMOS® P-Channel MOSFET, 190 mA, 250 V, 3-Pin SOT-89 BSS192PH6327FTSA1

Subtotal (1 reel of 1000 units)*

£154.00

(exc. VAT)

£185.00

(inc. VAT)

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RS Stock No.:
145-9451
Mfr. Part No.:
BSS192PH6327FTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

190 mA

Maximum Drain Source Voltage

250 V

Series

SIPMOS®

Package Type

SOT-89

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

2.5mm

Length

4.5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

4.9 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

1.5mm

Infineon SIPMOS® P-Channel MOSFETs


The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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