Infineon SIPMOS® P-Channel MOSFET, 430 mA, 250 V, 3-Pin SOT-223 BSP317PH6327XTSA1

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

430 mA

Maximum Drain Source Voltage

250 V

Package Type

SOT-223

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.5mm

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

11.6 nC @ 10 V

Length

6.5mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.6mm