P-Channel MOSFET, 430 mA, 250 V, 3-Pin SOT-223 Infineon BSP317PH6327XTSA1
- RS Stock No.:
- 911-4969
- Mfr. Part No.:
- BSP317PH6327XTSA1
- Brand:
- Infineon
Price Each (On a Reel of 1000)
£0.284
(exc. VAT)
£0.341
(inc. VAT)
6570 In stock - FREE next working day delivery available
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | £0.284 | £284.00 |
| 2000 - 2000 | £0.27 | £270.00 |
| 3000 + | £0.253 | £253.00 |
*price indicative
- RS Stock No.:
- 911-4969
- Mfr. Part No.:
- BSP317PH6327XTSA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- DE
Product Details
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 430 mA |
| Maximum Drain Source Voltage | 250 V |
| Series | SIPMOS® |
| Package Type | SOT-223 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 5 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 11.6 nC @ 10 V |
| Length | 6.5mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Width | 3.5mm |
| Number of Elements per Chip | 1 |
| Height | 1.6mm |
| Minimum Operating Temperature | -55 °C |
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