Infineon SIPMOS® P-Channel MOSFET, 260 mA, 250 V, 3-Pin SOT-223 BSP92PH6327XTSA1
- RS Stock No.:
- 752-8237
- Mfr. Part No.:
- BSP92PH6327XTSA1
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£4.10
(exc. VAT)
£4.90
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 30 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 + | £0.41 | £4.10 |
*price indicative
- RS Stock No.:
- 752-8237
- Mfr. Part No.:
- BSP92PH6327XTSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 260 mA | |
| Maximum Drain Source Voltage | 250 V | |
| Series | SIPMOS® | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 20 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.5mm | |
| Number of Elements per Chip | 1 | |
| Width | 3.5mm | |
| Typical Gate Charge @ Vgs | 4.3 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1.6mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 260 mA | ||
Maximum Drain Source Voltage 250 V | ||
Series SIPMOS® | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 20 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.5mm | ||
Number of Elements per Chip 1 | ||
Width 3.5mm | ||
Typical Gate Charge @ Vgs 4.3 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Height 1.6mm | ||
Minimum Operating Temperature -55 °C | ||
Related links
- Diodes Inc P-Channel MOSFET 250 V, 3-Pin SOT-223 ZVP4525GTA
- onsemi N-Channel MOSFET 60 V, 3-Pin SOT-23 2N7002ET
- Infineon SIPMOS® N-Channel MOSFET 240 V, 3-Pin SOT-89 BSS87H6327FTSA1
- onsemi N-Channel MOSFET 60 V, 3-Pin SOT-23 NTR5103NT1G
- Infineon SIPMOS® P-Channel MOSFET 250 V, 3-Pin SOT-223 BSP317PH6327XTSA1
- Nexperia P-Channel MOSFET 250 V115
- Nexperia N-Channel MOSFET 250 V115
- Diodes Inc N-Channel MOSFET 250 V, 3-Pin SOT-223 ZVN4525GTA