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Infineon SIPMOS® P-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-223 BSP171PH6327XTSA1

RS Stock No.:: 167-942
Mfr. Part No.:: BSP171PH6327XTSA1
Brand:: Infineon

Infineon SIPMOS® P-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-223 BSP171PH6327XTSA1

Bulk discount available

Subtotal (1 pack of 10 units)*

£4.33

(exc. VAT)

£5.20

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

50 unit(s) ready to ship
Plus 10 unit(s) ready to ship from another location
Plus 20,930 unit(s) shipping from 11 September 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 90	£0.433	£4.33
100 - 240	£0.411	£4.11
250 - 490	£0.403	£4.03
500 - 990	£0.377	£3.77
1000 +	£0.351	£3.51

*price indicative

RS Stock No.:: 167-942
Mfr. Part No.:: BSP171PH6327XTSA1
Brand:: Infineon

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS^® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

Infineon SIPMOS® Series MOSFET, 1.9A Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP171PH6327XTSA1

This MOSFET is designed for high-performance switching applications, utilising P-channel technology. With SIPMOS® technology, it ensures dependable operation in a compact SOT-223 package, making it a suitable option for automotive and industrial applications. The continuous drain current rating of 1.9A and a maximum voltage of 60V enhance its effectiveness in efficiently managing power across various uses.

Features & Benefits

• P-channel configuration supports low side switching applications
• Enhancement mode operation promotes efficient performance
• Surface mount design conserves valuable PCB space
• Rated for high temperatures up to +150°C, ensuring durability
• Low Rds(on) diminishes power loss during switching

Applications

• Load switching in automotive electronics
• Power management circuits for energy efficiency
• High-frequency requiring rapid switching
• Driving loads in consumer electronic devices
• Power supply circuits necessitating compact solutions

What is the maximum drain-source voltage this component can handle?

The component can withstand a maximum drain-source voltage of 60V, making it suitable for various applications.

How does this component perform at elevated temperatures?

It operates effectively at temperatures up to +150°C, providing performance in demanding environments.

Can it be used in battery-operated circuits?

Yes, its low Rds(on) significantly reduces power loss, making it well-suited for battery-operated devices.

What is the significance of the avalanche rating?

The avalanche rating indicates that the device can absorb energy spikes, enhancing its durability and reliability during transients.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	1.9 A
	Maximum Drain Source Voltage	60 V
	Series	SIPMOS®
	Package Type	SOT-223
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	300 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	1.8 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Length	6.5mm
	Transistor Material	Si
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	13 nC @ 10 V
	Width	3.5mm
	Height	1.6mm
	Forward Diode Voltage	1.1V
	Minimum Operating Temperature	-55 °C
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 1.9 A
	Maximum Drain Source Voltage 60 V
	Series SIPMOS®
	Package Type SOT-223
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 300 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 1.8 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Length 6.5mm
	Transistor Material Si
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 13 nC @ 10 V
	Width 3.5mm
	Height 1.6mm
	Forward Diode Voltage 1.1V
	Minimum Operating Temperature -55 °C
	Automotive Standard AEC-Q101

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