Infineon SIPMOS® P-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-223 BSP171PH6327XTSA1
- RS Stock No.:
- 167-942
- Mfr. Part No.:
- BSP171PH6327XTSA1
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£5.26
(exc. VAT)
£6.31
(inc. VAT)
FREE delivery for orders over £50.00
- 50 unit(s) ready to ship
- Plus 20,930 unit(s) shipping from 31 October 2025
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.526 | £5.26 |
| 100 - 240 | £0.499 | £4.99 |
| 250 - 490 | £0.489 | £4.89 |
| 500 - 990 | £0.458 | £4.58 |
| 1000 + | £0.426 | £4.26 |
*price indicative
- RS Stock No.:
- 167-942
- Mfr. Part No.:
- BSP171PH6327XTSA1
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 1.9 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-223 | |
| Series | SIPMOS® | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 300 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Width | 3.5mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.5mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | 1.1V | |
| Height | 1.6mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.9 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-223 | ||
Series SIPMOS® | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 300 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 3.5mm | ||
Maximum Operating Temperature +150 °C | ||
Length 6.5mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 13 nC @ 10 V | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.1V | ||
Height 1.6mm | ||
Minimum Operating Temperature -55 °C | ||
Infineon SIPMOS® P-Channel MOSFETs
· Pb-free lead plating, RoHS compliant
Infineon SIPMOS® Series MOSFET, 1.9A Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP171PH6327XTSA1
Features & Benefits
• Enhancement mode operation promotes efficient performance
• Surface mount design conserves valuable PCB space
• Rated for high temperatures up to +150°C, ensuring durability
• Low Rds(on) diminishes power loss during switching
Applications
• Power management circuits for energy efficiency
• High-frequency requiring rapid switching
• Driving loads in consumer electronic devices
• Power supply circuits necessitating compact solutions
What is the maximum drain-source voltage this component can handle?
How does this component perform at elevated temperatures?
Can it be used in battery-operated circuits?
What is the significance of the avalanche rating?
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