Infineon SIPMOS Type P-Channel MOSFET, 1.9 A, 60 V Enhancement, 4-Pin SOT-223 BSP171PH6327XTSA1
- RS Stock No.:
- 167-942
- Distrelec Article No.:
- 304-36-976
- Mfr. Part No.:
- BSP171PH6327XTSA1
- Brand:
- Infineon
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£5.81
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£6.97
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- 30 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.581 | £5.81 |
| 100 - 240 | £0.551 | £5.51 |
| 250 - 490 | £0.54 | £5.40 |
| 500 - 990 | £0.506 | £5.06 |
| 1000 + | £0.471 | £4.71 |
*price indicative
- RS Stock No.:
- 167-942
- Distrelec Article No.:
- 304-36-976
- Mfr. Part No.:
- BSP171PH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.1V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.5mm | |
| Height | 1.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.1V | ||
Maximum Power Dissipation Pd 1.8W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.5mm | ||
Height 1.6mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® Series MOSFET, 1.9A Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP171PH6327XTSA1
This MOSFET is designed for high-performance switching applications, utilising P-channel technology. With SIPMOS® technology, it ensures dependable operation in a compact SOT-223 package, making it a suitable option for automotive and industrial applications. The continuous drain current rating of 1.9A and a maximum voltage of 60V enhance its effectiveness in efficiently managing power across various uses.
Features & Benefits
• P-channel configuration supports low side switching applications
• Enhancement mode operation promotes efficient performance
• Surface mount design conserves valuable PCB space
• Rated for high temperatures up to +150°C, ensuring durability
• Low Rds(on) diminishes power loss during switching
Applications
• Load switching in automotive electronics
• Power management circuits for energy efficiency
• High-frequency requiring rapid switching
• Driving loads in consumer electronic devices
• Power supply circuits necessitating compact solutions
What is the maximum drain-source voltage this component can handle?
The component can withstand a maximum drain-source voltage of 60V, making it suitable for various applications.
How does this component perform at elevated temperatures?
It operates effectively at temperatures up to +150°C, providing performance in demanding environments.
Can it be used in battery-operated circuits?
Yes, its low Rds(on) significantly reduces power loss, making it well-suited for battery-operated devices.
What is the significance of the avalanche rating?
The avalanche rating indicates that the device can absorb energy spikes, enhancing its durability and reliability during transients.
How can I ensure proper installation on the PCB?
It is essential to follow the dimension specifications for the SOT-223 package and to implement adequate thermal management during installation.
Related links
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
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