Infineon SIPMOS® P-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-223 BSP170PH6327XTSA1
- RS Stock No.:
- 826-9250
- Mfr. Part No.:
- BSP170PH6327XTSA1
- Brand:
- Infineon
Subtotal (1 pack of 50 units)*
£30.65
(exc. VAT)
£36.80
(inc. VAT)
FREE delivery for orders over £50.00
- 900 unit(s) ready to ship
- Plus 1,000 unit(s) shipping from 10 September 2025
Units | Per unit | Per Pack* |
---|---|---|
50 - 50 | £0.613 | £30.65 |
100 - 200 | £0.454 | £22.70 |
250 - 450 | £0.423 | £21.15 |
500 - 1200 | £0.392 | £19.60 |
1250 + | £0.368 | £18.40 |
*price indicative
- RS Stock No.:
- 826-9250
- Mfr. Part No.:
- BSP170PH6327XTSA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 1.9 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SOT-223 | |
Series | SIPMOS® | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 300 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2.1V | |
Maximum Power Dissipation | 1.8 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Length | 6.5mm | |
Typical Gate Charge @ Vgs | 10 nC @ 10 V | |
Width | 3.5mm | |
Transistor Material | Si | |
Height | 1.6mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.9 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-223 | ||
Series SIPMOS® | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 300 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 1.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 6.5mm | ||
Typical Gate Charge @ Vgs 10 nC @ 10 V | ||
Width 3.5mm | ||
Transistor Material Si | ||
Height 1.6mm | ||
Minimum Operating Temperature -55 °C | ||
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