Infineon SIPMOS® P-Channel MOSFET, 2.9 A, 60 V, 3-Pin SOT-223 BSP613PH6327XTSA1
- RS Stock No.:
- 892-2236
- Mfr. Part No.:
- BSP613PH6327XTSA1
- Brand:
- Infineon
Subtotal (1 pack of 20 units)*
£9.42
(exc. VAT)
£11.30
(inc. VAT)
FREE delivery for orders over £50.00
- 60 unit(s) ready to ship
- Plus 13,820 unit(s) shipping from 08 September 2025
Units | Per unit | Per Pack* |
---|---|---|
20 - 80 | £0.471 | £9.42 |
100 - 180 | £0.381 | £7.62 |
200 - 480 | £0.371 | £7.42 |
500 - 980 | £0.361 | £7.22 |
1000 + | £0.352 | £7.04 |
*price indicative
- RS Stock No.:
- 892-2236
- Mfr. Part No.:
- BSP613PH6327XTSA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 2.9 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SOT-223 | |
Series | SIPMOS® | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 130 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2.1V | |
Maximum Power Dissipation | 10.8 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 22 nC @ 10 V | |
Length | 40mm | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Width | 40mm | |
Transistor Material | Si | |
Height | 1.5mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.1V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 2.9 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-223 | ||
Series SIPMOS® | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 130 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 10.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V | ||
Length 40mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 40mm | ||
Transistor Material Si | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.1V | ||
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