Infineon SIPMOS® P-Channel MOSFET, 2.9 A, 60 V, 3-Pin SOT-223 BSP613PH6327XTSA1

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Subtotal (1 reel of 1000 units)*

£369.00

(exc. VAT)

£443.00

(inc. VAT)

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  • 13,000 unit(s) ready to ship
  • Plus 999,986,000 unit(s) shipping from 28 January 2026
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Units
Per unit
Per Reel*
1000 - 1000£0.369£369.00
2000 - 2000£0.351£351.00
3000 +£0.337£337.00

*price indicative

RS Stock No.:
178-5073
Mfr. Part No.:
BSP613PH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

2.9 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

130 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

10.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

22 nC @ 10 V

Number of Elements per Chip

1

Length

40mm

Width

40mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.5mm

Forward Diode Voltage

1.1V

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