Infineon SIPMOS® P-Channel MOSFET, 2.9 A, 60 V, 3-Pin SOT-223 BSP613PH6327XTSA1
- RS Stock No.:
- 178-5073
- Mfr. Part No.:
- BSP613PH6327XTSA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£369.00
(exc. VAT)
£443.00
(inc. VAT)
FREE delivery for orders over £50.00
- 13,000 unit(s) ready to ship
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | £0.369 | £369.00 |
| 2000 - 2000 | £0.351 | £351.00 |
| 3000 + | £0.337 | £337.00 |
*price indicative
- RS Stock No.:
- 178-5073
- Mfr. Part No.:
- BSP613PH6327XTSA1
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 2.9 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-223 | |
| Series | SIPMOS® | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 130 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 10.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V | |
| Width | 40mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Length | 40mm | |
| Number of Elements per Chip | 1 | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.1V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 2.9 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-223 | ||
Series SIPMOS® | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 130 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 10.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V | ||
Width 40mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Length 40mm | ||
Number of Elements per Chip 1 | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.1V | ||
Infineon SIPMOS® P-Channel MOSFETs
· Pb-free lead plating, RoHS compliant
Enhancement mode
Avalanche rated
Logic Level
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