Infineon SIPMOS Type P-Channel MOSFET, 1.9 A, 60 V Enhancement, 4-Pin SOT-223

RS Stock No.:: 911-4791
Mfr. Part No.:: BSP171PH6327XTSA1
Brand:: Infineon

Infineon SIPMOS Type P-Channel MOSFET, 1.9 A, 60 V Enhancement, 4-Pin SOT-223

Bulk discount available

Subtotal (1 reel of 1000 units)*

£247.00

(exc. VAT)

£296.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

20,000 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
1000 - 1000	£0.247	£247.00
2000 - 2000	£0.235	£235.00
3000 +	£0.22	£220.00

*price indicative

RS Stock No.:: 911-4791
Mfr. Part No.:: BSP171PH6327XTSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	1.9A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-223
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	300mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	13nC
	Maximum Power Dissipation Pd	1.8W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.1V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	3.5 mm
	Length	6.5mm
	Height	1.6mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 1.9A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-223
	Series SIPMOS
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 300mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 13nC
	Maximum Power Dissipation Pd 1.8W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.1V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 3.5 mm
	Length 6.5mm
	Height 1.6mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

COO (Country of Origin):: MY

Infineon SIPMOS® Series MOSFET, 1.9A Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP171PH6327XTSA1

This MOSFET is designed for high-performance switching applications, utilising P-channel technology. With SIPMOS® technology, it ensures dependable operation in a compact SOT-223 package, making it a suitable option for automotive and industrial applications. The continuous drain current rating of 1.9A and a maximum voltage of 60V enhance its effectiveness in efficiently managing power across various uses.

Features & Benefits

• P-channel configuration supports low side switching applications

• Enhancement mode operation promotes efficient performance

• Surface mount design conserves valuable PCB space

• Rated for high temperatures up to +150°C, ensuring durability

• Low Rds(on) diminishes power loss during switching

Applications

• Load switching in automotive electronics

• Power management circuits for energy efficiency

• High-frequency requiring rapid switching

• Driving loads in consumer electronic devices

• Power supply circuits necessitating compact solutions

What is the maximum drain-source voltage this component can handle?

The component can withstand a maximum drain-source voltage of 60V, making it suitable for various applications.

How does this component perform at elevated temperatures?

It operates effectively at temperatures up to +150°C, providing performance in demanding environments.

Can it be used in battery-operated circuits?

Yes, its low Rds(on) significantly reduces power loss, making it well-suited for battery-operated devices.

What is the significance of the avalanche rating?

The avalanche rating indicates that the device can absorb energy spikes, enhancing its durability and reliability during transients.

How can I ensure proper installation on the PCB?

It is essential to follow the dimension specifications for the SOT-223 package and to implement adequate thermal management during installation.

Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency

Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

Explore the Infineon range today