Infineon SIPMOS® P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 SPP80P06PHXKSA1
- RS Stock No.:
- 914-0194
- Mfr. Part No.:
- SPP80P06PHXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£14.40
(exc. VAT)
£17.30
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 375 unit(s) ready to ship
- Plus 335 unit(s) shipping from 10 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £2.88 | £14.40 |
| 25 - 45 | £2.592 | £12.96 |
| 50 - 120 | £2.418 | £12.09 |
| 125 - 245 | £2.246 | £11.23 |
| 250 + | £2.074 | £10.37 |
*price indicative
- RS Stock No.:
- 914-0194
- Mfr. Part No.:
- SPP80P06PHXKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | SIPMOS® | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 23 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 340 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Width | 4.57mm | |
| Typical Gate Charge @ Vgs | 115 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.36mm | |
| Transistor Material | Si | |
| Height | 15.95mm | |
| Forward Diode Voltage | 1.6V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 60 V | ||
Series SIPMOS® | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 23 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 340 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 4.57mm | ||
Typical Gate Charge @ Vgs 115 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.36mm | ||
Transistor Material Si | ||
Height 15.95mm | ||
Forward Diode Voltage 1.6V | ||
Minimum Operating Temperature -55 °C | ||
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