P-Channel MOSFET, 620 mA, 60 V, 3-Pin SC-59 Infineon BSR315PH6327XTSA1
- RS Stock No.:
- 215-2469
- Mfr. Part No.:
- BSR315PH6327XTSA1
- Brand:
- Infineon
2700 In stock - FREE next working day delivery available
Added
Price Each (In a Pack of 50)
£0.396
(exc. VAT)
£0.475
(inc. VAT)
| Units | Per unit | Per Pack* |
| 50 - 50 | £0.396 | £19.80 |
| 100 - 200 | £0.289 | £14.45 |
| 250 - 450 | £0.273 | £13.65 |
| 500 - 1200 | £0.253 | £12.65 |
| 1250 + | £0.234 | £11.70 |
| *price indicative | ||
- RS Stock No.:
- 215-2469
- Mfr. Part No.:
- BSR315PH6327XTSA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
The Infineon SIPMOS® Small-Signal-Transistor P-channel enhancement mode Field-Effect Transistor (FET), -20V maximum drain source voltage with SOT-23 package type. The Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. The BSS84P is a p-channel enhancement mode MOSFET in a small surface mount package with superior switching performance. This product is particularly suited for low-voltage, low-current applications.
Enhancement mode
Logic level
Avalanche rated
Fast switching
Dv/dt rated
Pb-free lead-plating
Logic level
Avalanche rated
Fast switching
Dv/dt rated
Pb-free lead-plating
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 620 mA |
| Maximum Drain Source Voltage | 60 V |
| Series | SIPMOS® |
| Package Type | SC-59 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.8 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
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