Infineon SIPMOS® P-Channel MOSFET, 360 mA, 100 V, 3-Pin SC-59 BSR316PH6327XTSA1

Subtotal (1 reel of 3000 units)*

£336.00

(exc. VAT)

£402.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 27,000 unit(s) ready to ship
  • Plus 999,972,000 unit(s) shipping from 26 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +£0.112£336.00

*price indicative

RS Stock No.:
170-2250
Mfr. Part No.:
BSR316PH6327XTSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

360 mA

Maximum Drain Source Voltage

100 V

Package Type

SC-59

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+150 °C

Width

1.6mm

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

5.3 nC @ 10 V

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.1V

Minimum Operating Temperature

-55 °C

Height

1.1mm

All products in small signal packages are suitable for automotive applications

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics

Enhancement mode
Pb-free lead plating
Target Applications:
Automotive
Consumer
DC-DC
eMobility
Motor control
Notebook
Onboard charger

Related links