Infineon SIPMOS® P-Channel MOSFET, 360 mA, 100 V, 3-Pin SC-59 BSR316PH6327XTSA1
- RS Stock No.:
- 170-2250
- Mfr. Part No.:
- BSR316PH6327XTSA1
- Brand:
- Infineon
Subtotal (1 reel of 3000 units)*
£336.00
(exc. VAT)
£402.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 27,000 unit(s) shipping from 27 October 2025
- Plus 999,972,000 unit(s) shipping from 23 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.112 | £336.00 |
*price indicative
- RS Stock No.:
- 170-2250
- Mfr. Part No.:
- BSR316PH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 360 mA | |
| Maximum Drain Source Voltage | 100 V | |
| Series | SIPMOS® | |
| Package Type | SC-59 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.2 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 5.3 nC @ 10 V | |
| Width | 1.6mm | |
| Length | 3mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | 1.1V | |
| Height | 1.1mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 360 mA | ||
Maximum Drain Source Voltage 100 V | ||
Series SIPMOS® | ||
Package Type SC-59 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.2 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 5.3 nC @ 10 V | ||
Width 1.6mm | ||
Length 3mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.1V | ||
Height 1.1mm | ||
All products in small signal packages are suitable for automotive applications
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics
Enhancement mode
Pb-free lead plating
Target Applications:
Automotive
Consumer
DC-DC
eMobility
Motor control
Notebook
Onboard charger
Pb-free lead plating
Target Applications:
Automotive
Consumer
DC-DC
eMobility
Motor control
Notebook
Onboard charger
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