Infineon OptiMOS™ Dual N-Channel MOSFET, 50 A, 25 V, 8-Pin TISON-8 BSG0811NDATMA1

Subtotal (1 reel of 5000 units)*

£4,190.00

(exc. VAT)

£5,030.00

(inc. VAT)

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RS Stock No.:
215-2466
Mfr. Part No.:
BSG0811NDATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

25 V

Series

OptiMOS™

Package Type

TISON-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.003 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Number of Elements per Chip

2

Transistor Material

Si

The Infineon OptiMOS™ 5 Power Block is a leadless SMD package in a 5.0x6.0mm² package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS™ 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized.

50A max average load current
Source-down low side MOSFET for better PCB cooling
Internally connected low-side and high side (lowest loop inductance)
High side Kelvin connection for more efficient driving

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