Infineon OptiMOS™ Dual Silicon N-Channel MOSFET, 5 A, 55 V, 8-Pin SOIC BSO604NS2XUMA1

Subtotal (1 reel of 2500 units)*

£1,907.50

(exc. VAT)

£2,290.00

(inc. VAT)

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Per unit
Per Reel*
2500 +£0.763£1,907.50

*price indicative

RS Stock No.:
222-4623
Mfr. Part No.:
BSO604NS2XUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

55 V

Package Type

SOIC

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.035 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Number of Elements per Chip

2

Transistor Material

Silicon

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Logic level
Enhancement Mode Green Product (RoHS compliant)
AEC Qualified

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