Infineon OptiMOS™ Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON IPG20N06S4L26AATMA1

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Subtotal (1 pack of 15 units)*

£11.115

(exc. VAT)

£13.335

(inc. VAT)

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  • 24,870 unit(s) ready to ship
  • Plus 999,975,120 unit(s) shipping from 01 January 2026
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Units
Per unit
Per Pack*
15 - 60£0.741£11.12
75 - 135£0.704£10.56
150 - 360£0.689£10.34
375 - 735£0.645£9.68
750 +£0.601£9.02

*price indicative

Packaging Options:
RS Stock No.:
223-8523
Mfr. Part No.:
IPG20N06S4L26AATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Package Type

TDSON

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.026 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

2

Transistor Material

Si

The Infineon OptiMOS series dual N-channel MOSFET has drain to source voltage of 60 V. It has benefits of larger source lead frame connection for wire bonding and bond wire is 200um for up to 20A current.

Automotive AEC Q101 qualified
•MSL1 up to 260°C peak reflow
•175°C operating temperature
•Green package
•Ultra low Rds
•100% Avalanche tested

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