Infineon OptiMOS™ Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON IPG20N06S4L26AATMA1

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 15 units)*

£11.115

(exc. VAT)

£13.335

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 24,870 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
15 - 60£0.741£11.12
75 - 135£0.704£10.56
150 - 360£0.689£10.34
375 - 735£0.645£9.68
750 +£0.601£9.02

*price indicative

Packaging Options:
RS Stock No.:
223-8523
Mfr. Part No.:
IPG20N06S4L26AATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.026 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Transistor Material

Si

Number of Elements per Chip

2

The Infineon OptiMOS series dual N-channel MOSFET has drain to source voltage of 60 V. It has benefits of larger source lead frame connection for wire bonding and bond wire is 200um for up to 20A current.

Automotive AEC Q101 qualified
•MSL1 up to 260°C peak reflow
•175°C operating temperature
•Green package
•Ultra low Rds
•100% Avalanche tested

Sponsored
Infineon CoolSic Schottky Diode
Infineon Logo
Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
Explore the Infineon range today

Related links