Infineon OptiMOS™ Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON IPG20N06S2L65AATMA1
- RS Stock No.:
- 223-8519
- Mfr. Part No.:
- IPG20N06S2L65AATMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
£1,280.00
(exc. VAT)
£1,535.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 15,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
5000 + | £0.256 | £1,280.00 |
*price indicative
- RS Stock No.:
- 223-8519
- Mfr. Part No.:
- IPG20N06S2L65AATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 20 A | |
Maximum Drain Source Voltage | 55 V | |
Package Type | TDSON | |
Series | OptiMOS™ | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 0.065 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.2V | |
Transistor Material | Si | |
Number of Elements per Chip | 2 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TDSON | ||
Series OptiMOS™ | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.065 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
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