MPN

Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 55 V Enhancement, 8-Pin TDSON

RS Stock No.:: 223-8519
Mfr. Part No.:: IPG20N06S2L65AATMA1
Brand:: Infineon

Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 55 V Enhancement, 8-Pin TDSON

Subtotal (1 reel of 5000 units)*

£1,280.00

(exc. VAT)

£1,535.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 15,000 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
5000 +	£0.256	£1,280.00

*price indicative

RS Stock No.:: 223-8519
Mfr. Part No.:: IPG20N06S2L65AATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	Power Transistor
	Channel Type	Type N
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TDSON
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	65mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	9.4nC
	Maximum Power Dissipation Pd	43W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Transistor Configuration	Dual
	Standards/Approvals	RoHS
	Height	1mm
	Width	5.9 mm
	Length	5.15mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type Power Transistor
	Channel Type Type N
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 55V
	Package Type TDSON
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 65mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 9.4nC
	Maximum Power Dissipation Pd 43W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Transistor Configuration Dual
	Standards/Approvals RoHS
	Height 1mm
	Width 5.9 mm
	Length 5.15mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Datasheet - IPG20N06S2L65AATMA1

The Infineon OptiMOS series dual N-channel MOSFET has drain to source voltage of 55 V. It has benefits of larger source lead frame connection for wire bonding and bond wire is 200um for up to 20A current.

Automotive AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green package

Ultra low Rds

100% Avalanche tested