Infineon OptiMOS™ Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON IPG20N06S2L65AATMA1

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Subtotal (1 reel of 5000 units)*

£1,280.00

(exc. VAT)

£1,535.00

(inc. VAT)

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  • 15,000 unit(s) ready to ship
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Per Reel*
5000 +£0.256£1,280.00

*price indicative

RS Stock No.:
223-8519
Mfr. Part No.:
IPG20N06S2L65AATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

55 V

Package Type

TDSON

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.065 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

2

Transistor Material

Si

The Infineon OptiMOS series dual N-channel MOSFET has drain to source voltage of 55 V. It has benefits of larger source lead frame connection for wire bonding and bond wire is 200um for up to 20A current.

Automotive AEC Q101 qualified
•MSL1 up to 260°C peak reflow
•175°C operating temperature
•Green package
•Ultra low Rds
•100% Avalanche tested

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