Infineon OptiMOS™ Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON IPG20N06S2L65AATMA1
- RS Stock No.:
- 223-8519
- Mfr. Part No.:
- IPG20N06S2L65AATMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
£1,280.00
(exc. VAT)
£1,535.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 15,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
5000 + | £0.256 | £1,280.00 |
*price indicative
- RS Stock No.:
- 223-8519
- Mfr. Part No.:
- IPG20N06S2L65AATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 20 A | |
Maximum Drain Source Voltage | 55 V | |
Package Type | TDSON | |
Series | OptiMOS™ | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 0.065 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.2V | |
Transistor Material | Si | |
Number of Elements per Chip | 2 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TDSON | ||
Series OptiMOS™ | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.065 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
The Infineon OptiMOS series dual N-channel MOSFET has drain to source voltage of 55 V. It has benefits of larger source lead frame connection for wire bonding and bond wire is 200um for up to 20A current.
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package
Ultra low Rds
100% Avalanche tested
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package
Ultra low Rds
100% Avalanche tested
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