Infineon OptiMOS™ -T2 Dual N-Channel MOSFET, 16 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG16N10S461AATMA1

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Subtotal (1 pack of 20 units)*

£16.32

(exc. VAT)

£19.58

(inc. VAT)

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20 - 80£0.816£16.32
100 - 180£0.637£12.74
200 - 480£0.596£11.92
500 - 980£0.555£11.10
1000 +£0.514£10.28

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Packaging Options:
RS Stock No.:
214-9058
Mfr. Part No.:
IPG16N10S461AATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

100 V

Package Type

SuperSO8 5 x 6 Dual

Series

OptiMOS™ -T2

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.061 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

2

Transistor Material

Si

The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. The Dual N-channel Normal Level - Enhancement mode, are feasible for automatic optical inspection (AOI). OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.

The product is AEC Q101 qualified
100% Avalanche tested
It has 175°C operating temperature

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