Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON

Subtotal (1 reel of 5000 units)*

£2,015.00

(exc. VAT)

£2,420.00

(inc. VAT)

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Units
Per unit
Per Reel*
5000 +£0.403£2,015.00

*price indicative

RS Stock No.:
218-3059
Mfr. Part No.:
IPG20N10S436AATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

Power Transistor

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS-T2

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

36mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

43W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

9.4nC

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Length

5.15mm

Standards/Approvals

AEC Q101, RoHS

Width

5.9 mm

Height

1mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon OptiMOS™-T2 series dual N- channel automotive MOSFET. It is feasible for automatic optical inspection (AOI).

Dual N-channel - Enhancement mode

100% Avalanche tested

175°C operating temperature

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