Infineon OptiMOS™ -T2 Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N06S4L11AATMA1

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Subtotal (1 pack of 10 units)*

£11.10

(exc. VAT)

£13.30

(inc. VAT)

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Per Pack*
10 - 40£1.11£11.10
50 - 90£1.055£10.55
100 - 240£1.01£10.10
250 - 490£0.966£9.66
500 +£0.899£8.99

*price indicative

Packaging Options:
RS Stock No.:
214-9062
Mfr. Part No.:
IPG20N06S4L11AATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Package Type

SuperSO8 5 x 6 Dual

Series

OptiMOS™ -T2

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0112 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Transistor Material

Si

Number of Elements per Chip

2

The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. The Dual N-channel Logic Level - Enhancement mode, are feasible for automatic optical inspection (AOI). OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.

The product is AEC Q101 qualified
100% Avalanche tested
It has 175°C operating temperature

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